| Specifications | · Film: SiC Epi film with 3C structure grown by PECVD · Thickness: 1.26 micron +/- 10% (can be grown up to 20 micron th; the price would be increased with the requested film thickness) · Orientation: 3C SiC (100) · Surface: CMP ( film chemical mechanical polished ) on both sides with Ra < 5 Angstrom · Target doping level: < 1.0E16 /cc · Type and dopant: N type, Undoped · Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2 · Silicon substrate: · Size: 10mm x 10mm x 0.525 mm thickness · Orientation: (100) · Type: P type / B doped ( N type is available as well) · Resistivity: 1- 5 ohm.cm · Polish: one side polished
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