| Specifications | · Cu coated Si Wafer (4 inch size) · Thickness of highly oriented polycrystalline Cu <111> film: 400 nm · 4 inch dia x0.525 mm thickness Si wafer (Prime Grade) · P type, B doped, <100> orientation, SSP · Resistivities: 1-20 ohm-cm · Surface Roughness: as grown , N/A · Package: One 1000 class clean room with 100 class plastic bag |
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